Title :
Current-kink noise of n-channel enhancement e.s.f.i.-m.o.s. s.o.s. transistors
Author :
Fichtner, W. ; Hochmair, E.
Author_Institution :
Technische Universitÿt Wien, Institut fÿr Physikalische Elektronik, Wien, Austria
Abstract :
An experimental study of the low-frequency-noise properties of n-channel epitaxial silicon films on insulator m.o.s. s.o.s. transistors has been performed. The measurements show an excessive noise contribution at drain voltages corresponding to the current-kink effect for temperatures ranging from 4.2 to 300 K.
Keywords :
electron device noise; insulated gate field effect transistors; 4.2 to 300K; ESFI MOS SOS transistors; current kink noise; epitaxial Si film on insulator; low frequency noise; n-channel enhancement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770479
