• DocumentCode
    943645
  • Title

    Very-high-purity InP l.p.e. layers

  • Author

    Ip, K.T. ; Eastman, L.F. ; Wrick, V.L.

  • Author_Institution
    Cornell University, School of Electrical Engineering, Ithaca, USA
  • Volume
    13
  • Issue
    22
  • fYear
    1977
  • Firstpage
    682
  • Lastpage
    683
  • Abstract
    Very-high-purity l.p.e. InP layers with a ¿77 of 67 000cm2/Vs and an n77 of 1.1 × 1015 cm¿3, virtually uncompensated, having a low freeze-out ratio of 1.03, and with continuous surfaces with terraces but no inclusions, have been successfully grown, after the residual silicon donor in the melt has been baked away in H2 with trace amounts of H2O.
  • Keywords
    III-V semiconductors; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; freeze out ratio; high purity InP LPE layers; liquid phase epitaxy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770483
  • Filename
    4240628
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=943645