Title :
Very-high-purity InP l.p.e. layers
Author :
Ip, K.T. ; Eastman, L.F. ; Wrick, V.L.
Author_Institution :
Cornell University, School of Electrical Engineering, Ithaca, USA
Abstract :
Very-high-purity l.p.e. InP layers with a ¿77 of 67 000cm2/Vs and an n77 of 1.1 × 1015 cm¿3, virtually uncompensated, having a low freeze-out ratio of 1.03, and with continuous surfaces with terraces but no inclusions, have been successfully grown, after the residual silicon donor in the melt has been baked away in H2 with trace amounts of H2O.
Keywords :
III-V semiconductors; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; freeze out ratio; high purity InP LPE layers; liquid phase epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770483
