Title :
GaAs Schottky-barrier-diode frequency multipliers in 300 and 450 GHz bands
Author :
Takada, Tohru ; Yagasaki, Tsuneo ; Hirayama, Masahiro
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
A 450 GHz-band tripler delivering an output power of ¿11.2 dBm has been developed. A high-efficiency 300 GHz doubler whose conversion loss is 10.7 dB has also been developed. These efficient multiplications have been obtained by the use of GaAs Schottky-barrier diodes and thin-film integrated-circuit techniques.
Keywords :
Schottky-barrier diodes; frequency multipliers; microwave integrated circuits; 300 GHz band; 450 GHz band; GaAs Schottky barrier diode; conversion loss; frequency multipliers; thin film IC;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770494
