Title :
A comparative study of noise properties of Si IMPATT diodes operating at 80 GHz
Author :
Okamoto, H. ; Ikeda, M.
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo, Japan
fDate :
3/1/1976 12:00:00 AM
Abstract :
The oscillator-noise properties of three kinds of Si IMPATT diodes operating at 80 GHz are measured. A DDR type of diode is superior in FM noise measure to the other two SDR types, one of which operates in the fundamental frequency mode and the other in the second harmonic frequency mode.
Keywords :
Boron; Breakdown voltage; Circuit noise; Circuit testing; Diodes; Epitaxial layers; Frequency measurement; Noise level; Noise measurement; Power measurement;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1976.10120
