DocumentCode
944072
Title
A comparative study of noise properties of Si IMPATT diodes operating at 80 GHz
Author
Okamoto, H. ; Ikeda, M.
Author_Institution
Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo, Japan
Volume
64
Issue
3
fYear
1976
fDate
3/1/1976 12:00:00 AM
Firstpage
367
Lastpage
368
Abstract
The oscillator-noise properties of three kinds of Si IMPATT diodes operating at 80 GHz are measured. A DDR type of diode is superior in FM noise measure to the other two SDR types, one of which operates in the fundamental frequency mode and the other in the second harmonic frequency mode.
Keywords
Boron; Breakdown voltage; Circuit noise; Circuit testing; Diodes; Epitaxial layers; Frequency measurement; Noise level; Noise measurement; Power measurement;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1976.10120
Filename
1454389
Link To Document