• DocumentCode
    944170
  • Title

    Nonvolatile memory effects of Ag-Ag photodoped amorphous As2S3-Mo diode

  • Author

    Hirose, Yooichi ; Hirose, Haruo

  • Author_Institution
    Nippon Institute of Technology, Minami-Saitama, Saitama, Japan
  • Volume
    64
  • Issue
    3
  • fYear
    1976
  • fDate
    3/1/1976 12:00:00 AM
  • Firstpage
    378
  • Lastpage
    379
  • Abstract
    Better reversible switching and memory effects of a chalcogenide glass diode were observed in connection with the polarity-dependent threshold voltages. Thermal effects seem to be avoided in the functional process. A good reproducibility, realized by simple evaporations, will make a high packing density possible.
  • Keywords
    Amorphous materials; Amorphous semiconductors; Apertures; Electrodes; Microwave theory and techniques; Nonvolatile memory; Semiconductor diodes; Silver; Switches; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1976.10129
  • Filename
    1454398
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=944170