• DocumentCode
    944181
  • Title

    Secondary emission of beryllia on beryllium

  • Author

    Dallos, Andras ; Shapiro, Edward K. ; Shaw, B.A.

  • Author_Institution
    Raytheon Co., Waltham, MA, USA
  • Volume
    39
  • Issue
    11
  • fYear
    1992
  • fDate
    11/1/1992 12:00:00 AM
  • Firstpage
    2611
  • Lastpage
    2615
  • Abstract
    Thin layers of beryllia (BeO) were formed on beryllium (Be) substrates by oxygen-ion bombardment, heating beryllium in air, and by sputtering BeO. The secondary yield (from both secondary and backscattered electrons) was measured relative to BeO thickness and the contaminants present. The carbon content substantially reduces the yield and an expression was introduced to estimate the effect of other low-yield participants. The voltage for highest yield increased with BeO thickness, the yield versus voltage curves were also shown to be dependent on BeO thickness and exhibited sharp maxima. At greater thicknesses, surface voltage charging was suspected but investigation showed that this was not the case
  • Keywords
    beryllium compounds; secondary electron emission; Be substrate; BeO thickness; BeO-Be; maxima; secondary electron emission; yield versus voltage curves; Argon; Atomic layer deposition; Atomic measurements; Cathodes; Electrons; Heating; Sputtering; Surface cleaning; Surface morphology; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.163471
  • Filename
    163471