DocumentCode
944181
Title
Secondary emission of beryllia on beryllium
Author
Dallos, Andras ; Shapiro, Edward K. ; Shaw, B.A.
Author_Institution
Raytheon Co., Waltham, MA, USA
Volume
39
Issue
11
fYear
1992
fDate
11/1/1992 12:00:00 AM
Firstpage
2611
Lastpage
2615
Abstract
Thin layers of beryllia (BeO) were formed on beryllium (Be) substrates by oxygen-ion bombardment, heating beryllium in air, and by sputtering BeO. The secondary yield (from both secondary and backscattered electrons) was measured relative to BeO thickness and the contaminants present. The carbon content substantially reduces the yield and an expression was introduced to estimate the effect of other low-yield participants. The voltage for highest yield increased with BeO thickness, the yield versus voltage curves were also shown to be dependent on BeO thickness and exhibited sharp maxima. At greater thicknesses, surface voltage charging was suspected but investigation showed that this was not the case
Keywords
beryllium compounds; secondary electron emission; Be substrate; BeO thickness; BeO-Be; maxima; secondary electron emission; yield versus voltage curves; Argon; Atomic layer deposition; Atomic measurements; Cathodes; Electrons; Heating; Sputtering; Surface cleaning; Surface morphology; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.163471
Filename
163471
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