Title :
Grown junction GaAs solar cell
Author :
Shen, C.C. ; Pearson, Gerald L.
Author_Institution :
Stanford Electronics Laboratories, Stanford, CA
fDate :
3/1/1976 12:00:00 AM
Abstract :
Using multiple layer liquid phase epitaxial (LPE) growth techniques, p(AlxGa1-xAs:Ge)-p(GaAs:Ge)-n+(GaAs:Te) solar cells were fabricated. Germanium was used as the p-type dopant to eliminate impurity diffusion and to maximize minority carrier diffusion lengths. These procedures provide precise control of the thickness and carrier concentration of each individual layer.
Keywords :
Charge carrier processes; Doping; Gallium arsenide; Impurities; P-n junctions; Photovoltaic cells; Scanning electron microscopy; Temperature control; Thickness control; Zinc;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1976.10133
