Title :
A 3-dimensional computer simulation of the trapped-domain mode in Gunn devices
Author :
Atohoun, I.G. ; Riginos, V.E. ; Bohn, P.P.
Author_Institution :
COMSAT Laboratories, Clarksburg, MD
fDate :
3/1/1976 12:00:00 AM
Abstract :
This letter discusses the effects of surface charges and the cathode doping notch on the high-field domain propagation in an X-band cylindrical Gunn-effect device. The charges considered are the direct result of Maxwell´s boundary conditions imposed at the device surface. The letter also demonstrates that, for Gunn oscillations to prevail, a 3-dimensional model requires a larger doping fluctuation than a 1-dimensional model.
Keywords :
Anodes; Boundary conditions; Cathodes; Computer simulation; Doping; Fluctuations; Gunn devices; Laboratories; Mathematical model; Semiconductor process modeling;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1976.10134
