DocumentCode :
944230
Title :
Microwave capability of 1.5 μm-gate GaAs m.o.s.f.e.t.
Author :
Tokuda, Hirokuni ; Adachi, Yoshio ; Ikoma, Toshiaki
Author_Institution :
University of Tokyo, Institute of Industrial Science, Tokyo, Japan
Volume :
13
Issue :
25
fYear :
1977
Firstpage :
761
Lastpage :
763
Abstract :
1.5 μm-gate GaAs m.o.s.f.e.t.s have been fabricated by anodic oxidation, and the microwave capability has been examined. The maximum oscillation frequency fmax is 22 GHz and the noise figure is 6.1 dB at 8 GHz. The results are comparable to those of GaAs m.e.s.f.e.t.s.
Keywords :
insulated gate field effect transistors; solid-state microwave devices; anodic oxidation; maximum oscillation frequency; microwave capability; noise figure;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19770538
Filename :
4240690
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=944230
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