• DocumentCode
    944230
  • Title

    Microwave capability of 1.5 μm-gate GaAs m.o.s.f.e.t.

  • Author

    Tokuda, Hirokuni ; Adachi, Yoshio ; Ikoma, Toshiaki

  • Author_Institution
    University of Tokyo, Institute of Industrial Science, Tokyo, Japan
  • Volume
    13
  • Issue
    25
  • fYear
    1977
  • Firstpage
    761
  • Lastpage
    763
  • Abstract
    1.5 μm-gate GaAs m.o.s.f.e.t.s have been fabricated by anodic oxidation, and the microwave capability has been examined. The maximum oscillation frequency fmax is 22 GHz and the noise figure is 6.1 dB at 8 GHz. The results are comparable to those of GaAs m.e.s.f.e.t.s.
  • Keywords
    insulated gate field effect transistors; solid-state microwave devices; anodic oxidation; maximum oscillation frequency; microwave capability; noise figure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770538
  • Filename
    4240690
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=944230