• DocumentCode
    944529
  • Title

    GaAs m.a.o.s.f.e.t. memory transistor

  • Author

    Bayraktaroglu, B. ; Colquhoun, A. ; Hartnagel, H.L.

  • Author_Institution
    University of Newcastle upon Tyne, Department of Electrical & Electronic Engineering, Newcastle upon Tyne, UK
  • Volume
    14
  • Issue
    1
  • fYear
    1978
  • Firstpage
    19
  • Lastpage
    21
  • Abstract
    A new non-volatile memory device is reported. This device is a GaAs m.o.s.f.e.t. with charge storage in the gate in which is a double oxide structure of aluminium oxide and GaAs native oxide, both oxides are grown anodically. The fabrication of the device is described and the results of initial measurements on the charging and charge retention properties are presented.
  • Keywords
    insulated gate field effect transistors; semiconductor storage devices; Al2O3; GAAs MAOSFET memory transistor; charge retention properties; charge storage; double oxide structure; fabrication; gate insulator; nonvolatile memory device;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780014
  • Filename
    4240724
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=944529