Title :
GaAs m.a.o.s.f.e.t. memory transistor
Author :
Bayraktaroglu, B. ; Colquhoun, A. ; Hartnagel, H.L.
Author_Institution :
University of Newcastle upon Tyne, Department of Electrical & Electronic Engineering, Newcastle upon Tyne, UK
Abstract :
A new non-volatile memory device is reported. This device is a GaAs m.o.s.f.e.t. with charge storage in the gate in which is a double oxide structure of aluminium oxide and GaAs native oxide, both oxides are grown anodically. The fabrication of the device is described and the results of initial measurements on the charging and charge retention properties are presented.
Keywords :
insulated gate field effect transistors; semiconductor storage devices; Al2O3; GAAs MAOSFET memory transistor; charge retention properties; charge storage; double oxide structure; fabrication; gate insulator; nonvolatile memory device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780014
