Title :
Some effects of wave propagation in the gate of a microwave m.e.s.f.e.t.
Author_Institution :
University of New South Wales, Department of Solid-State Electronics, Kensington, Australia
Abstract :
In microwave field-effect transistors there is a progressive phase delay as a signal propagates along the gate, with a corresponding delay in channel modulation across the width of the transistor. It is shown that this leads to a phase lag in gm while the modulus of gm is comparatively unaffected.
Keywords :
Schottky gate field effect transistors; semiconductor device models; solid-state microwave devices; MESFET; channel modulation; gate; microwave field effect transistor; phase delay; phase lag; wave propagation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780015
