Double carrier injection in the sidegating effect in GaAs MESFETs

Author

Shulman, Dima D. ; Young, Lawrence

Author_Institution

Dept. of Electr. Eng., British Columbia Univ., Vancouver, BC, Canada

Volume

39

Issue

11

fYear

1992

fDate

11/1/1992 12:00:00 AM

Firstpage

2623

Lastpage

2626

Abstract

Double injection into the semi-insulating substrate was investigated as a mechanism of sidegating in GaAs MESFETs. A change of gate current with sidegate voltage and a correlation between abrupt variations in drain, gate, and sidegate currents and instabilities in test devices support a physical model in which a gradual decrease of drain current with a nonlinear potential profile across the substrate is caused by low-level double injection and an abrupt decrease of drain current is caused by high-level double injection

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; GaAs; MESFETs; carrier injection; double injection; drain current; gate current; high level injection; instabilities; low level injection; nonlinear potential profile; physical model; semi-insulating substrate; semiinsulating substrate; sidegate voltage; sidegating effect; Apertures; Crosstalk; Electron devices; Frequency; Gallium arsenide; MESFETs; Optical arrays; Optical imaging; Silicon; Transfer functions;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.163474

Filename

163474