DocumentCode
944586
Title
Intervalley scattering in gallium arsenide avalanche diodes
Author
Culshaw, Brian ; Blakey, P.A.
Author_Institution
University College London, London, England
Volume
64
Issue
4
fYear
1976
fDate
4/1/1976 12:00:00 AM
Firstpage
569
Lastpage
571
Abstract
The velocity-field characteristic of electrons in GaAs has been shown to have an important bearing on the properties of IMPATT diodes fabricated from this material. In this letter, the manner in which this characteristic varies with frequency is discussed and the properties of conventional and high-efficiency structures are compared. It is concluded that the effects of intervalley scattering are important, even in X band, and become increasingly significant as frequency increases.
Keywords
Acceleration; Diodes; Electric breakdown; Electrons; Frequency estimation; Gallium arsenide; Gunn devices; Satellites; Scattering; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1976.10170
Filename
1454439
Link To Document