DocumentCode
944667
Title
An improved analytical model for short-channel MOSFETs
Author
Chow, Hwang-Chemg ; Feng, Wu-Shiung
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume
39
Issue
11
fYear
1992
fDate
11/1/1992 12:00:00 AM
Firstpage
2626
Lastpage
2629
Abstract
An analytical model for short-channel MOSFETs including all second-order effects is proposed with a significant improvement on the saturation region operation. This model requires no numerical iterations and describes channel-length modulations of submicrometer MOS devices more accurately than other existing models. In addition, the influence of both the source-drain resistance and short-channel effects on the lateral channel electric field is also investigated
Keywords
insulated gate field effect transistors; semiconductor device models; analytical model; channel-length modulations; lateral channel electric field; saturation region operation; second-order effects; short-channel MOSFETs; source-drain resistance; submicron MOS devices; Analytical models; Circuits; Electron devices; Gallium arsenide; MESFETs; MOSFETs; Physics; Schottky diodes; Semiconductor diodes; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.163475
Filename
163475
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