DocumentCode
944688
Title
Broad-Band Noise Mechanisms and Noise Measurements of Metal Semiconductor Junctions
Author
Jelenski, A. ; Kollberg, Erik L. ; Zirath, Herbert H G
Volume
34
Issue
11
fYear
1986
fDate
11/1/1986 12:00:00 AM
Firstpage
1193
Lastpage
1201
Abstract
Classic work on optimized heterodyne receivers has concentrated on the network aspects of mixers with limited emphasis on device properties. We present experimental results of GaAs Schottky-barrier diode noise measurements in the frequency range from 0.1 to 88 GHz and a detailed analysis of noise generation in these diodes which can explain the observed current and frequency dependence.
Keywords
Acoustical engineering; Frequency; Gallium arsenide; Millimeter wave measurements; Noise measurement; Q measurement; Schottky diodes; Semiconductor device noise; Semiconductor diodes; Temperature measurement;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1986.1133516
Filename
1133516
Link To Document