DocumentCode :
944688
Title :
Broad-Band Noise Mechanisms and Noise Measurements of Metal Semiconductor Junctions
Author :
Jelenski, A. ; Kollberg, Erik L. ; Zirath, Herbert H G
Volume :
34
Issue :
11
fYear :
1986
fDate :
11/1/1986 12:00:00 AM
Firstpage :
1193
Lastpage :
1201
Abstract :
Classic work on optimized heterodyne receivers has concentrated on the network aspects of mixers with limited emphasis on device properties. We present experimental results of GaAs Schottky-barrier diode noise measurements in the frequency range from 0.1 to 88 GHz and a detailed analysis of noise generation in these diodes which can explain the observed current and frequency dependence.
Keywords :
Acoustical engineering; Frequency; Gallium arsenide; Millimeter wave measurements; Noise measurement; Q measurement; Schottky diodes; Semiconductor device noise; Semiconductor diodes; Temperature measurement;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1986.1133516
Filename :
1133516
Link To Document :
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