Title :
Very low noise silicon planar avalanche photodiodes
Author :
Goedbloed, J.J. ; Smeets, E.T.J.M.
Author_Institution :
Philips Research Laboratories, Eindhoven, Netherlands
Abstract :
A silicon n+¿p¿¿¿p+ reach-through avalanche photodiode is described, where the p region has a high-low-high doping profile formed by a combination of ion implantation and epitaxy. Effective noise factors as low as 0.008¿0.014 have been realised reproducibly for operation in the near-infrared. The influence of the primary photocurrent in the determination of the excess noise is discussed.
Keywords :
avalanche diodes; electron device noise; epitaxial growth; ion implantation; photodiodes; epitaxy; excess noise; ion implantation; planar avalanche photodiodes; primary photocurrent; very low noise;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780047
