Title :
Low temperature electroplated Au-SnNi-Au ohmic contacts on n type GaAs
Author :
Kelly, William M. ; Wrixon, Gerard T.
Author_Institution :
University College, Electrical Engineering Department, Cork, Ireland
Abstract :
A method is described for fabricating ohmic contacts on n type GaAs by alloying electroplated layers of Au-SnNi-Au at 300°C, resulting in a contact resistance of approximately 3 x 10-5 Ω cm2. In applications for which this resistance is adequate, the technique has the advantage of requiring low-temperature alloying for short times.
Keywords :
III-V semiconductors; electroplated coatings; gallium arsenide; gold; nickel alloys; ohmic contacts; tin alloys; 3 x 10-5 ohm cm2 contact resistance; 300 /spl degree/ C alloying; Au-SnNi-Au contacts; alloying electroplated layers; fabricating ohmic contacts; low temperature alloying contacts; n-GaAs; ohmic contacts;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780054
