Title :
A new d.h. laser configuration with passive transverse field confinement
Author :
Rozzi, T.E. ; van Heuven, J.H.C. ; In´t Veld, G.H.
Author_Institution :
Philips Research Laboratories, Eindhoven, Netherlands
Abstract :
A new geometry is proposed which significantly improves the characteristics of single mode d.h. stripe geometry lasers, with regard to astigmatism of the near field, transverse field confinement, modal gain and threshold current. The advantages over other devices are discussed. Numerical results are presented for 5 and 10 ¿m stripe lasers.
Keywords :
semiconductor junction lasers; 10 micron strip lasers; 5 micron strip lasers; modal gain; near field astigmatism; passive transverse field confinement; semiconductor junction lasers; single mode DH stripe geometry lasers; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780059
