DocumentCode
945005
Title
A new d.h. laser configuration with passive transverse field confinement
Author
Rozzi, T.E. ; van Heuven, J.H.C. ; In´t Veld, G.H.
Author_Institution
Philips Research Laboratories, Eindhoven, Netherlands
Volume
14
Issue
4
fYear
1978
Firstpage
87
Lastpage
88
Abstract
A new geometry is proposed which significantly improves the characteristics of single mode d.h. stripe geometry lasers, with regard to astigmatism of the near field, transverse field confinement, modal gain and threshold current. The advantages over other devices are discussed. Numerical results are presented for 5 and 10 ¿m stripe lasers.
Keywords
semiconductor junction lasers; 10 micron strip lasers; 5 micron strip lasers; modal gain; near field astigmatism; passive transverse field confinement; semiconductor junction lasers; single mode DH stripe geometry lasers; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19780059
Filename
4240843
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