• DocumentCode
    945088
  • Title

    Investigation into the survival of epitaxial bipolar transistors in current mode second breakdown

  • Author

    Dow, M. ; Nuttall, K.I.

  • Author_Institution
    University of Liverpool, Department of Electrical Engineering and Electronics, Liverpool, UK
  • Volume
    14
  • Issue
    4
  • fYear
    1978
  • Firstpage
    100
  • Lastpage
    101
  • Abstract
    Measurements have been obtained of the time for which epitaxial transistors are able to survive when pulsed into the current mode second breakdown condition. The results have been analysed to provide information on the nature of the constricted current distribution. The work indicates the effects that emitter geometry has on the extent of the current constriction.
  • Keywords
    bipolar transistors; current distribution; constricted current distribution; current mode second breakdown; emitter geometry; epitaxial bipolar transistors; survival time; transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780067
  • Filename
    4240855
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=945088