Title :
Switching conduction in ion-irradiated layers in GaAs
Author :
Houghton, A.J.N.
Author_Institution :
University of Nottingham, Department of Electrical and Electronic Engineering, Nottingham, UK
Abstract :
Experiments have been performed to investigate whether switching phenomena are observable in ion-irradiated GaAs. It is found that the V/I characteristics of H2+-and N+-irradiated layers show both negative resistance and switching from a high resistance to a low resistance state. Ion irradiation may thus be a useful method of fabricating switching devices.
Keywords :
III-V semiconductors; electrical conductivity transitions; gallium arsenide; ion beam effects; ion implantation; negative resistance effects; semiconductor switches; GaAs; V/I characteristics; electrical conductivity transitions; ion beam effects; ion irradiated layers; negative resistance; switching conduction; switching phenomena;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780069
