DocumentCode
945361
Title
Hydrogenation of polycrystalline silicon thin film transistors by plasma ion implantation
Author
Bernstein, James D. ; Qin, Shu ; Chan, Chung ; King, Tsu-Jae
Author_Institution
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
Volume
16
Issue
10
fYear
1995
Firstpage
421
Lastpage
423
Abstract
Both n- and p-channel polycrystalline silicon (poly-Si) thin film transistors (TFT´s) have been hydrogenated using the plasma ion implantation (PII) technique. Significant improvements in device characteristics have been obtained. Because PII is capable of greater dose rates than plasma immersion, it allows for significantly shorter process times than other methods investigated thus far.<>
Keywords
electron traps; elemental semiconductors; hydrogen; ion implantation; silicon; thin film transistors; Si:H; device characteristics; dose rates; hydrogenation; plasma immersion; plasma ion implantation; polysilicon thin film transistors; process times; Hydrogen; Ion implantation; Plasma density; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Plasma properties; Plasma sheaths; Silicon; Thin film transistors;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.464804
Filename
464804
Link To Document