Title :
Effect of surface treatment on electromigration in aluminum films
Author :
Wada, Tetsuaki ; Sugimoto, Masao ; Ajiki, Tsuneo
Author_Institution :
Matsushita Electron. Corp., Kyoto, Japan
fDate :
12/1/1989 12:00:00 AM
Abstract :
Surface treatment methods for educing aluminum electromigration are studied. Simple methods for reducing aluminum electromigration have been found. Oxygen-plasma treatment and a H2O2 dip after aluminum patterning are shown to improve conductor life with respect to electromigration. By the oxygen-plasma treatment, the mean times to failure is improved more than two time over that for the current method. This improvement of life is a function of the oxygen-plasma treatment time and is affected by aluminum annealing and the material used for passivation. By H2O2 dip treatment, the mean time to failure is improved more than three times over that obtained using the current method. This improvement of life depends on the aluminum area exposed to the H2O2 dip. The improvement of conductor life due to surface treatments can be explained by suppression of the aluminum surface and/or grain diffusivity due to oxidation of the aluminum surface
Keywords :
aluminium; electromigration; integrated circuit technology; metallisation; reliability; surface treatment; Al films; H2O2 dip; O2 plasma treatment; annealing; conductor life; electromigration; grain diffusivity; mean times to failure; metallisation; passivation; reliability; surface treatment; Aluminum; Conductors; Dielectric thin films; Electromigration; Electronic equipment testing; Passivation; Plasma applications; Reliability engineering; Silicon; Surface treatment;
Journal_Title :
Reliability, IEEE Transactions on
