Effect of surface treatment on electromigration in aluminum films

Author

Wada, Tetsuaki ; Sugimoto, Masao ; Ajiki, Tsuneo

Author_Institution

Matsushita Electron. Corp., Kyoto, Japan

Volume

38

Issue

5

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

565

Lastpage

570

Abstract

Surface treatment methods for educing aluminum electromigration are studied. Simple methods for reducing aluminum electromigration have been found. Oxygen-plasma treatment and a H₂O₂ dip after aluminum patterning are shown to improve conductor life with respect to electromigration. By the oxygen-plasma treatment, the mean times to failure is improved more than two time over that for the current method. This improvement of life is a function of the oxygen-plasma treatment time and is affected by aluminum annealing and the material used for passivation. By H₂O₂ dip treatment, the mean time to failure is improved more than three times over that obtained using the current method. This improvement of life depends on the aluminum area exposed to the H₂O₂ dip. The improvement of conductor life due to surface treatments can be explained by suppression of the aluminum surface and/or grain diffusivity due to oxidation of the aluminum surface

Keywords

aluminium; electromigration; integrated circuit technology; metallisation; reliability; surface treatment; Al films; H₂O₂ dip; O₂ plasma treatment; annealing; conductor life; electromigration; grain diffusivity; mean times to failure; metallisation; passivation; reliability; surface treatment; Aluminum; Conductors; Dielectric thin films; Electromigration; Electronic equipment testing; Passivation; Plasma applications; Reliability engineering; Silicon; Surface treatment;

fLanguage

English

Journal_Title

Reliability, IEEE Transactions on

Publisher

ieee

ISSN

0018-9529

Type

jour

DOI

10.1109/24.46481

Filename

46481