DocumentCode
945427
Title
Impact ionization and distribution functions in sub-micron nMOSFET technologies
Author
Bude, J.D. ; Mastrapasqua, M.
Author_Institution
AT&T Bell Labs., Murray Hill, NJ, USA
Volume
16
Issue
10
fYear
1995
Firstpage
439
Lastpage
441
Abstract
The physics of impact ionization generated substrate current in 0.1 μm nMOSFET´s technologies is clarified by comparison of experiment and full-band Monte Carlo (MC) simulation for a wide range of biases. Quasiballistic transport is confirmed. It is shown for the first time that these devices allow extraction of ionization probabilities near threshold from substrate current measurements.
Keywords
MOSFET; Monte Carlo methods; electric current; impact ionisation; 0.1 micron; distribution functions; full-band Monte Carlo simulation; impact ionization; ionization probabilities near threshold; n-channel MOSFET; quasiballistic transport; submicron nMOSFET technologies; substrate current measurements; Acoustic scattering; Current measurement; Distribution functions; Doping profiles; Impact ionization; MOSFET circuits; Monte Carlo methods; Optical scattering; Phonons; Sliding mode control;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.464810
Filename
464810
Link To Document