Title :
Impact ionization and distribution functions in sub-micron nMOSFET technologies
Author :
Bude, J.D. ; Mastrapasqua, M.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
The physics of impact ionization generated substrate current in 0.1 μm nMOSFET´s technologies is clarified by comparison of experiment and full-band Monte Carlo (MC) simulation for a wide range of biases. Quasiballistic transport is confirmed. It is shown for the first time that these devices allow extraction of ionization probabilities near threshold from substrate current measurements.
Keywords :
MOSFET; Monte Carlo methods; electric current; impact ionisation; 0.1 micron; distribution functions; full-band Monte Carlo simulation; impact ionization; ionization probabilities near threshold; n-channel MOSFET; quasiballistic transport; submicron nMOSFET technologies; substrate current measurements; Acoustic scattering; Current measurement; Distribution functions; Doping profiles; Impact ionization; MOSFET circuits; Monte Carlo methods; Optical scattering; Phonons; Sliding mode control;
Journal_Title :
Electron Device Letters, IEEE
