Title :
Non-local effects in p-MOSFET substrate hot-hole injection experiments
Author :
Selmi, L. ; Sangiorgi, E. ; Bez, R.
Author_Institution :
Dept. of Electron., Bologna Univ., Italy
Abstract :
Extensive measurements of hot-hole injection probability from silicon into silicon dioxide covering a wide range of oxide fields and substrate biases are presented and compared with results previously published in the literature. It is found that, in the highly inhomogeneous electric fields typically needed to induce substrate hole injection, nonlocal effects take place that limit the possibility to accurately describe injection probability data by means of a unique set of lucky carrier model parameters.<>
Keywords :
MOSFET; electric fields; hot carriers; probability; Si-SiO/sub 2/; hot-hole injection probability; inhomogeneous electric fields; lucky carrier model parameters; nonlocal effects; oxide fields; p-MOSFET; p-channel MOSFET; substrate biases; substrate hot-hole injection experiments; Current density; Current measurement; Degradation; Geometry; Hot carriers; MOS devices; MOSFET circuits; Nonuniform electric fields; Semiconductor process modeling; Silicon compounds;
Journal_Title :
Electron Device Letters, IEEE
