35-GHz intrinsic bandwidth for direct modulation in 1.3-μm semiconductor lasers subject to strong injection locking

Author

Hwang, S.K. ; Liu, J.M. ; White, J.K.

Author_Institution

Graduate Inst. of Opto-Mechatronics, Nat. Chung Cheng Univ., Taiwan, Taiwan

Volume

16

Issue

4

fYear

2004

fDate

4/1/2004 12:00:00 AM

Firstpage

972

Lastpage

974

Abstract

Significant enhancement in modulation bandwidth of semiconductor lasers subject to strong optical injection is experimentally and theoretically studied. At least two folds of improvement is achieved under study. By using an optical probing method, a modulation bandwidth of 35 GHz that is free from electrical parasitic effects is observed in the injection-locked laser system. The achieved bandwidth approaches the maximum modulation bandwidth set by the K factor for the free-running laser. Discussions are presented for an even larger modulation bandwidth using the injection-locking technique.

Keywords

electro-optical modulation; laser mode locking; optical communication; optical communication equipment; semiconductor lasers; 1.3 mum; 35 GHz; direct modulation; electrical parasitic effects; free-running laser; injection-locked laser system; intrinsic bandwidth; modulation bandwidth; optical communications; optical probing method; semiconductor lasers; strong injection locking; strong optical injection; Bandwidth; Frequency; High speed optical techniques; Injection-locked oscillators; Masers; Optical attenuators; Optical interferometry; Optical mixing; Optical modulation; Semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.824627

Filename

1281841