• DocumentCode
    945455
  • Title

    Ion implanted GaAs varactor diodes: capacitance uniformity

  • Author

    Toyoda, Nobuyuki ; Niikura, Ikuo ; Shimura, Yasuo ; Hozuki, Toshitaka ; Sugibuchi, Hisashi ; Mihara, Minoru ; Hara, Tohru

  • Author_Institution
    Matsushita Research Institute Tokyo Inc., Kawasaki, Japan
  • Volume
    14
  • Issue
    5
  • fYear
    1978
  • Firstpage
    152
  • Lastpage
    154
  • Abstract
    Gallium arsenide varactor diodes with low series resistance (~0.25 ¿) for u.h.f. t.v. tuners are developed. Uniformity and reproducibility of diode capacitance is improved markedly by using improved ion implantation and l.p.e. techniques. The standard deviation of diode capacitance distribution is 0.74% at V = 3.0 V within a wafer. A good r.f. tracking characteristic can be obtained in varactor tuners.
  • Keywords
    capacitance; ion implantation; liquid phase epitaxial growth; semiconductor device manufacture; varactors; GaAs varactor diodes; capacitance uniformity; diode capacitance; ion implantation; l.p.e. techniques; r.f. tracking; standard deviation; varactor tuners;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780102
  • Filename
    4240910
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=945455