Title :
Ion implanted GaAs varactor diodes: capacitance uniformity
Author :
Toyoda, Nobuyuki ; Niikura, Ikuo ; Shimura, Yasuo ; Hozuki, Toshitaka ; Sugibuchi, Hisashi ; Mihara, Minoru ; Hara, Tohru
Author_Institution :
Matsushita Research Institute Tokyo Inc., Kawasaki, Japan
Abstract :
Gallium arsenide varactor diodes with low series resistance (~0.25 ¿) for u.h.f. t.v. tuners are developed. Uniformity and reproducibility of diode capacitance is improved markedly by using improved ion implantation and l.p.e. techniques. The standard deviation of diode capacitance distribution is 0.74% at V = 3.0 V within a wafer. A good r.f. tracking characteristic can be obtained in varactor tuners.
Keywords :
capacitance; ion implantation; liquid phase epitaxial growth; semiconductor device manufacture; varactors; GaAs varactor diodes; capacitance uniformity; diode capacitance; ion implantation; l.p.e. techniques; r.f. tracking; standard deviation; varactor tuners;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780102
