DocumentCode
945456
Title
Heterojunction devices
Author
Kroemer, H.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
Volume
39
Issue
11
fYear
1992
fDate
11/1/1992 12:00:00 AM
Firstpage
2635
Lastpage
2636
Abstract
Summary form only given. The development of heterojunction devices is reviewed. Particular attention is given to the 1963 proposal of a heterojunction laser, and to the appreciation of the merits of the lattice-matched (Al,Ga)As system and the achievement of a suitable LPE (liquid phase epitaxy) technology. Consideration is also given to developments involving molecular beam epitaxy, organometallic vapor-phase epitaxy, high electron mobility transistors, and the II-VI blue-green diode laser
Keywords
epitaxial growth; high electron mobility transistors; semiconductor devices; semiconductor growth; semiconductor lasers; AlGaAs; HEMT; II-VI blue-green diode laser; LPE; MBE; VPE; heterojunction devices; heterojunction laser; high electron mobility transistors; lattice-matched (Al,Ga)As system; liquid phase epitaxy; molecular beam epitaxy; organometallic vapor-phase epitaxy; Heterojunctions; History; Insulation; Power lasers; Production; Semiconductor laser arrays; Semiconductor lasers; Silicon; Space technology; Transistors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.163482
Filename
163482
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