Title :
Heterojunction devices
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
fDate :
11/1/1992 12:00:00 AM
Abstract :
Summary form only given. The development of heterojunction devices is reviewed. Particular attention is given to the 1963 proposal of a heterojunction laser, and to the appreciation of the merits of the lattice-matched (Al,Ga)As system and the achievement of a suitable LPE (liquid phase epitaxy) technology. Consideration is also given to developments involving molecular beam epitaxy, organometallic vapor-phase epitaxy, high electron mobility transistors, and the II-VI blue-green diode laser
Keywords :
epitaxial growth; high electron mobility transistors; semiconductor devices; semiconductor growth; semiconductor lasers; AlGaAs; HEMT; II-VI blue-green diode laser; LPE; MBE; VPE; heterojunction devices; heterojunction laser; high electron mobility transistors; lattice-matched (Al,Ga)As system; liquid phase epitaxy; molecular beam epitaxy; organometallic vapor-phase epitaxy; Heterojunctions; History; Insulation; Power lasers; Production; Semiconductor laser arrays; Semiconductor lasers; Silicon; Space technology; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
