Orientation effect on AlGaAs/GaAs heterojunction bipolar transistors

Author

Ishida, Hidetoshi ; Ueda, Daisuke

Author_Institution

Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan

Volume

16

Issue

10

fYear

1995

Firstpage

448

Lastpage

450

Abstract

Orientation effects on N-p-n AlGaAs/GaAs heterojunction bipolar transistors (HBT´s) have been demonstrated for the first time. We have observed that the current gains of HBT´s fabricated on the same wafer are strongly dependent on the emitter direction. The HBT´s with emitter direction of [010] show the highest current gain and the smallest emitter-size effect. This orientation effect could be attributed to the piezoelectric effect, which superposes the piezoelectric charges to the original emitter doping and generates the weak lateral electric field that drifts the injected carriers at the emitter periphery. The difference of the saturation voltage between collector-emitter of those HBT´s corresponds to the superposed piezoelectric charges.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; piezoelectricity; AlGaAs-GaAs; current gains; emitter direction; emitter-size effect; heterojunction bipolar transistors; injected carriers; n-p-n HBT; orientation effect; piezoelectric effect; saturation voltage; superposed piezoelectric charges; Bipolar transistors; Current density; Doping; Electrodes; Etching; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Piezoelectric effect; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.464813

Filename

464813