Title :
A new technique for device compatible anodic oxidation of GaAs
Author :
Tokuda, Hirokuni ; Yokomizo, Hiroshi ; Adachi, Yoshio ; Ikoma, Toshiaki ; Frey, Jeffrey
Author_Institution :
University of Tokyo, Institute of Industrial Science, Tokyo, Japan
Abstract :
A simple and effective new technique has been demonstrated which improves markedly the chemical and electrical properties of heat-treated anodic oxide films on GaAs. This technique should facilitate the use of anodic oxides in innovative GaAs devices.
Keywords :
III-VI semiconductors; anodisation; gallium arsenide; oxidation; semiconductor technology; GaAs; anodic oxidation; device compatible;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780109
