DocumentCode
945522
Title
A new technique for device compatible anodic oxidation of GaAs
Author
Tokuda, Hirokuni ; Yokomizo, Hiroshi ; Adachi, Yoshio ; Ikoma, Toshiaki ; Frey, Jeffrey
Author_Institution
University of Tokyo, Institute of Industrial Science, Tokyo, Japan
Volume
14
Issue
6
fYear
1978
Firstpage
163
Lastpage
165
Abstract
A simple and effective new technique has been demonstrated which improves markedly the chemical and electrical properties of heat-treated anodic oxide films on GaAs. This technique should facilitate the use of anodic oxides in innovative GaAs devices.
Keywords
III-VI semiconductors; anodisation; gallium arsenide; oxidation; semiconductor technology; GaAs; anodic oxidation; device compatible;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19780109
Filename
4240945
Link To Document