Title :
A 4--8 GHz dual gate m.e.s.f.e.t. amplifier
Author :
Goel, Jitendra ; Wolkstein, Herbert J.
Author_Institution :
RCA Laboratories, Microwave Technology Center, David Sarnoff Research Center, Princeton, USA
Abstract :
A two-stage dual-gate f.e.t. amplifier with small signal gain of 20 ± 0.75 dB, covering an octave bandwidth (4--8 GHz) and having a dynamic gain control range in excess of 60 dB is reported. The gain frequency response, input and output v.s.w.r. are described as a function of second-gate voltage. The performance of the dual-gate f.e.t. amplifier as a fast r.f. switch is also presented.
Keywords :
Schottky gate field effect transistors; field effect transistor circuits; frequency response; microwave amplifiers; solid-state microwave circuits; 4 to 8 GHz; RF switch; VSWR; dual gate MESFET amplifier; dynamic gain control range; gain frequency response; small signal gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780111
