DocumentCode :
945568
Title :
Evaluation of high-temperature absorption coefficients of optical fibers
Author :
Shuto, Y. ; Yanagi, S. ; Asakawa, S. ; Kobayashi, M. ; Nagase, R.
Author_Institution :
NTT Photonics Labs., Nippon Telegraph & Telephone Corp., Atsugi, Japan
Volume :
16
Issue :
4
fYear :
2004
fDate :
4/1/2004 12:00:00 AM
Firstpage :
1008
Lastpage :
1010
Abstract :
The large absorption coefficient /spl alpha/ of single-mode optical fiber at high temperatures is closely related to the generation of the fiber fuse phenomenon. We propose a high-temperature loss-increase mechanism, which includes three factors that bring about an increase in the /spl alpha/ values: 1) point-defect (Ge E´ center) formation; 2) electronic conductivity due to the thermal ionization of a Ge-doped silica core; and 3) thermochemical SiO production in the silica glass. Ge E´-center formation and electronic conductivity in the Ge-doped silica core are dominant factors at temperatures near the critical temperature of 1323 K. However, these factors cannot explain the large /spl alpha/ values observed at high temperatures above 2273 K. By contrast, SiO gas and/or solid, which are thermochemically produced in the silica glass, exhibit large /spl alpha/ values of the order of 104 m/sup -1/ at 2293 K. The /spl alpha/ value estimated at 0.5 μm is close to the experimental value reported in the fiber fuse experiments.
Keywords :
absorption coefficients; electrical conductivity; germanium; high-temperature effects; optical fibre testing; point defects; 1323 K; 2273 K; 2293 K; Ge-doped silica core; SiO/sub 2/:Ge; electronic conductivity; fiber fuse phenomenon; high-temperature absorption coefficients; high-temperature loss-increase mechanism; optical fibers; point-defect; silica glass; single-mode optical fiber; thermal ionization; thermochemical SiO production; Absorption; Fuses; Glass; Ionization; Optical fibers; Optical losses; Silicon compounds; Temperature; Thermal conductivity; Thermal factors;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2004.824633
Filename :
1281853
Link To Document :
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