Title :
13 μm wide stripe c.w. GaAs/GaAlAs d.h. lasers linear to more than 10 mW
Author :
Lindstrom, C. ; Janson, M.
Author_Institution :
Microwave Institute Foundation, Stockholm, Sweden
Abstract :
By using a very uniform device structure it has been possible to fabricate stripe contact d.h. GaAs/GaAlAs injection lasers with linear continuous output power exceeding 10 mW from one facet independent of stripe width in the range 10--14 μm. These results predict that there is no fundamental mechanism that gives a nonlinearity at a few milliwatts output power which could explain earlier published results, and that increased maximum linear output power could be achieved by further improving the uniformity of the device structure.
Keywords :
III-V semiconductors; gallium arsenide; semiconductor junction lasers; GaAs-GaAlAs laser; linear continuous output power; stripe contact CW DH injection lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780114