Title :
Performance of GaAs power m.e.s.f.e.t.s
Author :
Wemple, S.H. ; Niehaus, W.C. ; Schlosser, W.O. ; Dilorenzo, J.V. ; Cox, H.M.
Author_Institution :
Bell Laboratories, Murray Hill, USA
Abstract :
Power performance results at 4 GHz are summarised for GaAs m.e.s.f.e.t.s ranging in size from 4 to 16 mm gate periphery. A double-chip 16 mm unit operated at 24 V source-drain bias produced 13.5 W with 3 dB gain and 10.7 W with 8.1 dB gain. Although lack of perfect power and gain scaling is observed, the degradation in output power of the 16 mm devices was only 1 dB compared to the smaller devices.
Keywords :
Schottky gate field effect transistors; power transistors; solid-state microwave devices; 4 GHz; GaAs power MESFET;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780116
