Title :
Modification of zinc diffusion profiles in GaAs by proton irradiation
Author :
Houghton, A.J. ; Tuck, Brian ; Stephens, K.G.
Author_Institution :
University of Nottingham, Department of Electrical and Electronic Engineering, Nottingham, UK
Abstract :
A technique is described which gives control over the dopant distribution for zinc diffusion in GaAs. Experimental profiles are presented which show that both dopant depth and concentration can be increased by prior H+-irradiation. The zinc atom concentration profiles are shown to correspond with the carrier (hole) profiles.
Keywords :
III-V semiconductors; diffusion in solids; doping profiles; gallium arsenide; proton effects; GaAs; Zn diffusion profiles; dopant distribution; proton irradiation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780123
