• DocumentCode
    945707
  • Title

    Mobility profiling of f.e.t. structures

  • Author

    Jay, P.R. ; Crossley, I. ; Cardwell, M.J.

  • Author_Institution
    Plessey Company Limited, Allen Clark Research Centre, Towcester, UK
  • Volume
    14
  • Issue
    6
  • fYear
    1978
  • Firstpage
    190
  • Lastpage
    191
  • Abstract
    Several techniques have been used to obtain electron mobility profiles in GaAs f.e.t. structures. In particular, mobilities have been measured near the interface between the active n layer and the underlying high resistivity material. The most detailed information in this region has been obtained using a Schottky-gated Van der Pauw technique.
  • Keywords
    carrier mobility; field effect transistors; GaAs FET; Schottky gated Van der Pauw technique; electron mobility profiles;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780127
  • Filename
    4240977
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=945707