DocumentCode
945753
Title
Direct modulation of InGaAsP/InP double heterostructure lasers
Author
Akiba, Shigeyuki ; Sakai, Kenji ; Yamamoto, Takayuki
Author_Institution
KDD Research & Development Laboratories, Tokyo, Japan
Volume
14
Issue
6
fYear
1978
Firstpage
197
Lastpage
198
Abstract
Direct modulation of an InGaAsP/InP double heterostructure laser was investigated experimentally. Sinusoidal modulation up to 2.5 GHz was achieved with almost constant modulation efficiency. Pulse responses showed that the damped relaxation oscillation in light output was well suppressed.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical modulation; semiconductor junction lasers; 2.5 GHz; InGaAsP-InP laser; damped relaxation oscillation; direct modulation; double heterostructure lasers; sinusoidal modulation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19780131
Filename
4240984
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