p+ polysilicon emitters for sub-0.5 μm high-performance p-n-p

Summary form only given. The authors describe the tradeoffs between E-B (emitter-base) junction depth, base width, and device characteristics for high-performance sub-0.5-μm p-n-p designs. Near-ideal p-n-p transistors have been fabricated with emitter widths down to 0.25 μm while maintaining an E-B junction depth close to 60 nm. Further improvements in emitter processing, e.g., poly thickness, interfacial oxygen level, emitter implant, and anneal conditions, will allow thinner base widths to be achieved at these small emitter dimensions for future quarter-micrometer complementary bipolar technologies