DocumentCode :
945808
Title :
Profile design for distortion reduction in microwave field-effect transistors
Author :
Pucel, Robert A.
Author_Institution :
Raytheon Company, Research Division, Waltham, USA
Volume :
14
Issue :
6
fYear :
1978
Firstpage :
204
Lastpage :
206
Abstract :
Profile shaping can reduce third-order intermodulation distortion in microwave f.e.t.s. The mathematical form of the profiles to accomplish this has been derived. It is shown that two forms are possible, one corresponding to a doping spike, the other to an inverse cubic decrease in doping with distance from the episurface. The first has been approximated by workers in the field. The second is believed to be novel.
Keywords :
electric distortion; field effect transistors; power transistors; solid-state microwave devices; distortion reduction; intermodulation distortion; microwave field effect transistors; power FET; profile shaping;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19780136
Filename :
4240992
Link To Document :
بازگشت