Title :
Profile design for distortion reduction in microwave field-effect transistors
Author :
Pucel, Robert A.
Author_Institution :
Raytheon Company, Research Division, Waltham, USA
Abstract :
Profile shaping can reduce third-order intermodulation distortion in microwave f.e.t.s. The mathematical form of the profiles to accomplish this has been derived. It is shown that two forms are possible, one corresponding to a doping spike, the other to an inverse cubic decrease in doping with distance from the episurface. The first has been approximated by workers in the field. The second is believed to be novel.
Keywords :
electric distortion; field effect transistors; power transistors; solid-state microwave devices; distortion reduction; intermodulation distortion; microwave field effect transistors; power FET; profile shaping;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780136