Profile design for distortion reduction in microwave field-effect transistors

Profile shaping can reduce third-order intermodulation distortion in microwave f.e.t.s. The mathematical form of the profiles to accomplish this has been derived. It is shown that two forms are possible, one corresponding to a doping spike, the other to an inverse cubic decrease in doping with distance from the episurface. The first has been approximated by workers in the field. The second is believed to be novel.