A method to determine the crystallographic perfection of superconducting epitaxial films

Author

Kovalev, A.S. ; Obraztsov, A.N.

Author_Institution

Nucl. Phys. Inst., Moscow State Univ., Russia

Volume

3

Issue

1

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

1601

Lastpage

1603

Abstract

The anisotropy of polarized light reflection in the spectral range 1-3 eV, as well as Raman scattering spectra, have been investigated for YBa/sub 2/Cu/sub 3/O/sub 7-x/ films deposited by laser ablation. Large areas (up to 1 mm) with reflectance anisotropy equal to that of untwinned single crystal were revealed. The existence of large untwinned areas on high-temperature epitaxial films was shown by this method.<>

Keywords

Raman spectra of inorganic solids; X-ray diffraction examination of materials; barium compounds; high-temperature superconductors; pulsed laser deposition; reflectivity; superconducting epitaxial layers; vapour phase epitaxial growth; yttrium compounds; 1 to 3 eV; Raman scattering spectra; X-ray diffraction; YBa/sub 2/Cu/sub 3/O/sub 7-x/ films; crystallographic perfection; high-temperature epitaxial films; polarized light reflection; reflectance anisotropy; superconducting epitaxial films; untwinned single crystal; Anisotropic magnetoresistance; Crystallography; Optical films; Optical polarization; Optical reflection; Reflectivity; Spectroscopy; Superconducting epitaxial layers; Superconducting films; Yttrium barium copper oxide;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.233899

Filename

233899