Title :
Power devices in gallium arsenide
Author_Institution :
GEC Research Ltd., GEC Hirst Research Centre, Wembley, UK
fDate :
12/1/1985 12:00:00 AM
Abstract :
The use of gallium arsenide for power devices has recently been the subject of a number of papers. The paper examines the properties of gallium arsenide relevant to power device behaviour together with published results on power devices made in gallium arsenide.
Keywords :
III-V semiconductors; Schottky-barrier diodes; bipolar transistors; gallium arsenide; junction gate field effect transistors; power transistors; reviews; solid-state rectifiers; thyristors; GaAs; III-V semiconductors; JFET; Schottky-barrier diode-rectifiers; bipolar devices; dynamic response; fast response diodes; heterojunction technology; junction FET; majority carrier devices; minority carrier devices; p-n junction rectifiers; power device; reviews; thyristors; transistors;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1985.0059
