Title :
Lateral current spreading in DH-lasers above threshold
Author :
van de Capelle, J.P. ; Vankwikelberge, P. ; Baets, R.
Author_Institution :
University of Ghent, Laboratory of Electromagnetism and Acoustics, Ghent, Belgium
fDate :
4/1/1986 12:00:00 AM
Abstract :
A fully self-consistent model for DH-lasers is proposed, in which the coupling between the current injection and the active layer carrier concentration has been taken into account. It is found that this interaction has an appreciable influence on the mode displacement along the lateral direction, at high injection levels, due to preferential injection.
Keywords :
laser theory; semiconductor junction lasers; active layer carrier concentration; current injection; double heterojunction laser; lateral current spreading;
Journal_Title :
Optoelectronics, IEE Proceedings J
DOI :
10.1049/ip-j.1986.0023
