• DocumentCode
    946346
  • Title

    GaAs m.e.s.f.e.t. technology and characteristics for optical communication systems

  • Author

    Dekkers, J.J.M. ; Filensky, W. ; Beneking, H.

  • Author_Institution
    Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
  • Volume
    14
  • Issue
    9
  • fYear
    1978
  • Firstpage
    272
  • Lastpage
    274
  • Abstract
    For pulse regeneration applications GaAs m.e.s.f.e.t.s with low pinch-off voltages are desirable. The technology and the dependence of the input/output pulse width ratio on the bias voltage are described. The pulse behaviour of a two-stage sharpener is shown and the block diagram of an optical repeater station is proposed.
  • Keywords
    Schottky gate field effect transistors; field effect transistor circuits; optical communication equipment; pulse shaping circuits; repeaters; GaAs MESFET technology; bias voltage; input/output pulse width ratio; optical communication systems; optical repeater station; pulse regeneration; two stage sharpener;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780185
  • Filename
    4241064
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=946346