Title :
Distributed Equivalent-Circuit Model for Traveling-Wave FET Design
Author :
Heinrich, Wolfgang
fDate :
5/1/1987 12:00:00 AM
Abstract :
Based on reliable theoretical results, a distributed MESFET model is developed. It consists of equivalent-circuit elements which can be evaluated directly from FET material constants and geometry. The deviations with respect to full-wave-analysis results are investigated and some applications are shown.
Keywords :
Capacitance; Conductivity; FETs; Fitting; Geometry; Helium; MESFETs; Reliability theory; Roentgenium; Transmission line theory;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1987.1133688
