DocumentCode
946430
Title
Distributed Equivalent-Circuit Model for Traveling-Wave FET Design
Author
Heinrich, Wolfgang
Volume
35
Issue
5
fYear
1987
fDate
5/1/1987 12:00:00 AM
Firstpage
487
Lastpage
491
Abstract
Based on reliable theoretical results, a distributed MESFET model is developed. It consists of equivalent-circuit elements which can be evaluated directly from FET material constants and geometry. The deviations with respect to full-wave-analysis results are investigated and some applications are shown.
Keywords
Capacitance; Conductivity; FETs; Fitting; Geometry; Helium; MESFETs; Reliability theory; Roentgenium; Transmission line theory;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1987.1133688
Filename
1133688
Link To Document