Title :
Lateral phototransistor with low intensity light sensitivity
Author :
Hayashi, Yutaka ; Yoshihara, Hirofumi
Author_Institution :
Electrotechnical Laboratory, Tokyo, Japan
Abstract :
A lateral phototransistor with stable sensitivity to a light input of the order of 10¿3lx was fabricated by a single selective diffusion of boron in n on n+ epitaxial wafer. An extended emitter electrode on SiO2, over a whole emitter-base surface junction is employed to obtain stable low-level current gain.
Keywords :
phototransistors; SiO2; current gain stability; emitter base surface junction; lateral phototransistor; low intensity light sensitivity; single selective diffusion;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780201
