• DocumentCode
    946547
  • Title

    Carrier removal profiles from oxygen implanted GaAs

  • Author

    Gecim, S. ; Sealy, B.J. ; Stephens, K.G.

  • Author_Institution
    University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK
  • Volume
    14
  • Issue
    10
  • fYear
    1978
  • Firstpage
    306
  • Lastpage
    308
  • Abstract
    Carrier removal profiles have been measured in annealed, oxygen implanted, n-type GaAs samples. The implants were performed at room temperature with an ion energy of 400 keV. A dose of 1015 O+/cm2 produced a resistivity of about 108 ¿/¿ over a layer 0.6 ¿m thick, but no significant electrical compensation was observed from doses less than 1013 O+/cm2. However, doses of 1011 to 5×1012 O+/cm2 produced resistivities of 108 to 109 ¿/¿ without subsequent annealing.
  • Keywords
    III-V semiconductors; electrical conductivity of crystalline semiconductors and insulators; gallium arsenide; ion implantation; oxygen; GaAs; O2 implanted; carrier removal profiles; n-type; resistivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780208
  • Filename
    4241095
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=946547