Title :
Carrier removal profiles from oxygen implanted GaAs
Author :
Gecim, S. ; Sealy, B.J. ; Stephens, K.G.
Author_Institution :
University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK
Abstract :
Carrier removal profiles have been measured in annealed, oxygen implanted, n-type GaAs samples. The implants were performed at room temperature with an ion energy of 400 keV. A dose of 1015 O+/cm2 produced a resistivity of about 108 ¿/¿ over a layer 0.6 ¿m thick, but no significant electrical compensation was observed from doses less than 1013 O+/cm2. However, doses of 1011 to 5×1012 O+/cm2 produced resistivities of 108 to 109 ¿/¿ without subsequent annealing.
Keywords :
III-V semiconductors; electrical conductivity of crystalline semiconductors and insulators; gallium arsenide; ion implantation; oxygen; GaAs; O2 implanted; carrier removal profiles; n-type; resistivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780208
