• DocumentCode
    946699
  • Title

    New contact resistance profiling method for the assessment of III--V alloy multilayer structures

  • Author

    Goodfellow, R.C. ; Carter, A.C. ; Davis, Ronald W. ; Hill, Christopher

  • Author_Institution
    Plessey Company Ltd., Allen Clark Research Centre, Towcester, UK
  • Volume
    14
  • Issue
    11
  • fYear
    1978
  • Firstpage
    328
  • Lastpage
    330
  • Abstract
    A practical technique for the assessment of multilayer III--V structures is described which is based on the measurement of the contact resistance between a tungsten carbide probe and an angle lapped sample surface. The technique has been applied to homostructure and double heterostructure layers of GaAs, GaAlAs, InP and GaInAsP and quantitative information on the doping profiles has been obtained by calibration against binary material samples of known impurity levels.
  • Keywords
    III-V semiconductors; contact resistance; doping profiles; p-n heterojunctions; p-n homojunctions; GaAlAs; GaAs; GaInAsP; III-V alloy multilayer structures; InP; contact resistance profiling method; doping profiles; double heterostructure layers; homostructure layers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780223
  • Filename
    4241113
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=946699