Nondestructive readout architecture for a kinetic inductance memory cell

A kinetic inductance memory cell is examined. Such a memory cell can be made small and is more tolerant of the effects of nearby trapped flux than the conventional method of storing data. However, magnetic control of the cell is lost and current injection methods are required to read and write the data. The authors describe a conceptual kinetic inductance nondestructive-read-out memory cell along with a current injection access architecture. A potential fabrication technology that will minimize the size of the memory cells is discussed.<>