Title :
I-V characteristics of a thin-film transistor with graded channel thickness
Author_Institution :
Oakland University, Rochester, MI
Abstract :
The expression for source-drain characteristics of a thin-film transister with linearly graded channel thickness is presented based on a depletion-type operating in an enhancement mode. The saturation voltage derived from the I-V expression was found to decrease significantly, as compared to uniform channel having comparable semiconductor film thickness as the source end of the graded channel.
Keywords :
Conductive films; Electrodes; Electron mobility; Low voltage; Permittivity; Scattering; Semiconductor device doping; Semiconductor films; Semiconductor process modeling; Thin film transistors;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1976.10394
