• DocumentCode
    946855
  • Title

    I-V characteristics of a thin-film transistor with graded channel thickness

  • Author

    Weng, Tung H.

  • Author_Institution
    Oakland University, Rochester, MI
  • Volume
    64
  • Issue
    11
  • fYear
    1976
  • Firstpage
    1637
  • Lastpage
    1638
  • Abstract
    The expression for source-drain characteristics of a thin-film transister with linearly graded channel thickness is presented based on a depletion-type operating in an enhancement mode. The saturation voltage derived from the I-V expression was found to decrease significantly, as compared to uniform channel having comparable semiconductor film thickness as the source end of the graded channel.
  • Keywords
    Conductive films; Electrodes; Electron mobility; Low voltage; Permittivity; Scattering; Semiconductor device doping; Semiconductor films; Semiconductor process modeling; Thin film transistors;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1976.10394
  • Filename
    1454663
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=946855