DocumentCode :
947069
Title :
Mid-infrared phase modulation by intersubband transitions in quantum wells
Author :
Delacourt, D. ; Papuchon, M.
Volume :
39
Issue :
11
fYear :
1992
fDate :
11/1/1992 12:00:00 AM
Firstpage :
2646
Abstract :
A mid-infrared phase modulator using the Stark effect on intersubband transitions in step GaAs-GaAlAs n-doped quantum wells is demonstrated. Upon illumination the carriers are excited from a ground state E1 to a global state E2. Because of the strong asymmetry of the structure, the transition energy is linearly blue or red shifted depending on the direction of the applied electric field. Owing to the Kramers-Kronig relations, absorption and refractive index are correlated. The present study consists in experimentally demonstrating this correlation in relation to intersubband transitions. To do so, an interferometer and standard lock-in techniques were used to simultaneously measure amplitude and phase modulation around 10.6 μm
Keywords :
III-V semiconductors; Kramers-Kronig relations; Stark effect; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; optical modulation; phase modulation; 10.6 micron; GaAs-GaAlAs; Kramers-Kronig relations; Stark effect; absorption; applied electric field; interferometer; intersubband transitions; lock-in techniques; mid-infrared phase modulator; n-doped; quantum wells; refractive index; semiconductors; Electrons; Indium gallium arsenide; Luminescence; Optical devices; Optical materials; Optical modulation; Phase modulation; Pulse modulation; Stark effect; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.163497
Filename :
163497
Link To Document :
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