DocumentCode
947069
Title
Mid-infrared phase modulation by intersubband transitions in quantum wells
Author
Delacourt, D. ; Papuchon, M.
Volume
39
Issue
11
fYear
1992
fDate
11/1/1992 12:00:00 AM
Firstpage
2646
Abstract
A mid-infrared phase modulator using the Stark effect on intersubband transitions in step GaAs-GaAlAs n-doped quantum wells is demonstrated. Upon illumination the carriers are excited from a ground state E 1 to a global state E 2. Because of the strong asymmetry of the structure, the transition energy is linearly blue or red shifted depending on the direction of the applied electric field. Owing to the Kramers-Kronig relations, absorption and refractive index are correlated. The present study consists in experimentally demonstrating this correlation in relation to intersubband transitions. To do so, an interferometer and standard lock-in techniques were used to simultaneously measure amplitude and phase modulation around 10.6 μm
Keywords
III-V semiconductors; Kramers-Kronig relations; Stark effect; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; optical modulation; phase modulation; 10.6 micron; GaAs-GaAlAs; Kramers-Kronig relations; Stark effect; absorption; applied electric field; interferometer; intersubband transitions; lock-in techniques; mid-infrared phase modulator; n-doped; quantum wells; refractive index; semiconductors; Electrons; Indium gallium arsenide; Luminescence; Optical devices; Optical materials; Optical modulation; Phase modulation; Pulse modulation; Stark effect; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.163497
Filename
163497
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