• DocumentCode
    947069
  • Title

    Mid-infrared phase modulation by intersubband transitions in quantum wells

  • Author

    Delacourt, D. ; Papuchon, M.

  • Volume
    39
  • Issue
    11
  • fYear
    1992
  • fDate
    11/1/1992 12:00:00 AM
  • Firstpage
    2646
  • Abstract
    A mid-infrared phase modulator using the Stark effect on intersubband transitions in step GaAs-GaAlAs n-doped quantum wells is demonstrated. Upon illumination the carriers are excited from a ground state E1 to a global state E2. Because of the strong asymmetry of the structure, the transition energy is linearly blue or red shifted depending on the direction of the applied electric field. Owing to the Kramers-Kronig relations, absorption and refractive index are correlated. The present study consists in experimentally demonstrating this correlation in relation to intersubband transitions. To do so, an interferometer and standard lock-in techniques were used to simultaneously measure amplitude and phase modulation around 10.6 μm
  • Keywords
    III-V semiconductors; Kramers-Kronig relations; Stark effect; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; optical modulation; phase modulation; 10.6 micron; GaAs-GaAlAs; Kramers-Kronig relations; Stark effect; absorption; applied electric field; interferometer; intersubband transitions; lock-in techniques; mid-infrared phase modulator; n-doped; quantum wells; refractive index; semiconductors; Electrons; Indium gallium arsenide; Luminescence; Optical devices; Optical materials; Optical modulation; Phase modulation; Pulse modulation; Stark effect; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.163497
  • Filename
    163497