Field effect devices based on metal-insulator-YBa/sub 2/Cu/sub 3/O/sub 7-x/ films

Author

Brorsson, G. ; Boikov, Yu. ; Ivanov, Z.G. ; Claeson, T.

Author_Institution

Dept. of Phys., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

3

Issue

1

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

2922

Lastpage

2924

Abstract

A comparative study of the electric field effect in both ultrathin (4.5-nm) and comparatively thick (200-nm) polycrystalline YBa/sub 2/Cu/sub 3/O/sub 7-x/ films was performed. In the first case SrTiO/sub 3/ was used as gate insulator, and in the second case (Pb,Zr)TiO/sub 3/ was used as the gate insulator. In the ultrathin film the critical current, was increased and decreased up to 2.4%, by applying negative and positive voltages of 80 V. In the polycrystalline film (T/sub c/=84.5 K) an increase of the normal resistance of 7% was measured when applying a gate voltage of +1.78 V. This film consisted of superconducting grains with high T/sub c/, connected by grain boundaries with deteriorated superconducting properties. It is concluded that the electric field influenced the grain boundaries.<>

Keywords

barium compounds; field effect transistors; high-temperature superconductors; superconducting junction devices; superconducting thin films; yttrium compounds; critical current; electric field effect; grain boundaries; high temperature superconductor; polycrystalline YBa/sub 2/Cu/sub 3/O/sub 7-x/ films; Amorphous materials; Bridge circuits; Grain boundaries; Insulation; Metal-insulator structures; Substrates; Superconducting films; Superconducting materials; Voltage; Yttrium barium copper oxide;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.234012

Filename

234012